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WEBUK Government buys compound semi fab. £11.5M support for UK semiconductor scale-ups. Meta reveals LEDos-based AR glasses prototype. Report highlights opportunities for UK companies. Battle for 8-inch SiC heats up. Soitec and Resonac sign SmartSiC agreement. US-India fab pact targets compound semis. …
Ennostar and PlayNitride join forces to develop Micro LED
WEBNov 14, 2022 — Market for display-related Micro LED chips to reach $542M in 2024, says TrendForce. Ennostar’s subsidiary Epistar and PlayNitride’s subsidiary PlayNitride Display have announced that they have teamed up to build a production line for 6-inch Micro LED epi-wafers. Looking at the latest progress in the development of Micro LED, large-sized ...
Optimising metal alloy deposition with single-source evaporation
WEBSingle-source evaporation, the approach we advocate for the deposition of many metal alloys, has been historically overshadowed by sputtering and co-evaporation. In the silicon IC industry, sputtering of AlCu is especially popular. However, unlike electron-beam evaporation, the non-directionality of sputtering makes it an inherently poor choice ...
A Coherent plan for SiC - News - Compound Semiconductor
WEBOct 18, 2023 — Through the licensing of General Electric’s SiC MOSFET technology, Coherent has been qualifying 1200 V and 1700 V devices that meet the Automotive Electronics Council AEC-Q101 standard. “If you look at the power market, they guarantee 175 degrees C,” says Khan. “We guarantee 200 degrees C operation. Our devices are very rugged and go ...
Infineon adds 650V SiC MOSFET in TOLL packaging - News
WEBJul 19, 2023 — The new CoolSiC MOSFET 650V in TOLL industrial-grade discretes are available in various drain-source on-resistance (R DS (on)) options from 22 to 83 mΩ and can be ordered now (107, 163 mΩ and 260 mΩ versions will be available on-demand). PECVD200™ Plasma Enhanced Chemical Vapor Deposition System. CVD Equipment Corporation's PECVD200™ is ...
Monolithically integrated GaN power ICs - News
WEBMay 18, 2020 — To build on all this success, the next step is the development of a GaN integrated power IC. Such a circuit promises to enhance the potential for fast-switching GaN power HEMTs by suppressing parasitic inductance and trimming the size of the chip.Various building blocks are needed for the production of all-GaN power ICs.
The world’s biggest SiC fab - News
WEBJan 2, 2024 — One of the companies grabbing the headlines for capacity expansion is the power-electronics giant Infineon, which lays claim to constructing the world’s biggest 200 mm SiC fab, in both size and capacity. Initially backed by €2 billion of internal funding, plans for the new fab in Kulim, Malaysia, were bolstered last summer with the ...
GaAs: technical breakthroughs pushed by photonics - News
WEBJun 2, 2020 — As of 2020, according Yole Développement's latest research, photonics and LEDs represent the main drivers for this markets. The new study forecasts the the total GaAs wafer market will increase from $200 million in 2019 to more than $348 million by 2025, with a CAGR of 10 percent. Ezgi Dogmus, member of …
Singapore outlines research focus at SEMICON - News
WEBAug 24, 2021 — At SEMICON Southeast Asia 2021, Terence Gan, SVP, Semiconductors, Economic Development Board (EDB) of Singapore, delivered an opening address which outlined the main microelectronics research pillars for Singapore in the medium-to-long term including heterogenous integration, millimetrre wave …
Infineon introduces next gen CoolSiC MOSFETs - News
WEBMar 5, 2024 — Infineon has introduced the next generation of SiC MOSFET trench technology. The company says that its CoolSiC MOSFET 650 V and 1200 V Generation 2 improve MOSFET performance figures such as stored energies and charges by up to 20 percent compared to the previous generation. A DC fast charging station for electric vehicles which is equipped ...