Samsung Electronics is reportedly adopting Molybdenum (Mo) for the metal wiring process in its ninth-generation 3D NAND (V9 NAND) technology. Save my User ID and Password Some subscribers prefer to ...

The late 1990s saw the widespread introduction of solid-state storage based around NAND Flash. Ranging from memory cards for portable devices to storage for desktops and laptops, the data storage ...

For several decades, NAND Flash has been the primary technology for low-cost and large-density data storage applications. This non-volatile memory is present in all major electronic end-use markets, ...

Vertical scaling is vital to increasing the storage density of 3D NAND. According to imec, airgap integration and charge trap layer separation are the keys to unlocking it. Inside the charge trap cell ...

FREMONT, Calif., July 31, 2024 /PRNewswire/ -- Lam Research Corp. (Nasdaq: LRCX) today extended its leadership in 3D NAND flash memory etching with the introduction of Lam Cryo™ 3.0, the third ...

Samsung Electronics is keenly exploring "hafnia ferroelectrics" as a next-generation NAND flash material, with the hope that this new material will enable stacking over 1,000 layers of 3D NAND and ...

Data-intensive computing applications such as pattern recognition, video processing, database engine and network router have drastically increased due to the rapid development of big data and ...

Increased storage needs at the edge and in the cloud are fueling rising demand for higher-capacity flash memory across multiple applications. Released every 12 to 18 months, 3D NAND scaling outpaces ...

TL;DR: Samsung Electronics has developed a 400-layer NAND technology, surpassing SK hynix's 321-layer NAND. This positions Samsung as a leader in NAND flash technology. The 400-layer NAND will enter ...