Peking University has published its findings on a wafer-scale 2D GAAFET in Nature, pointing a new path into the Angstrom era ...

It carries the capability to manage or modify current or voltage flow, amplify and produce electrical signals, and act as a switch or gate. The impressive fact is that trillions of these transistors ...

A type of 3D FinFET transistor from Intel introduced in 2011 with its Ivy Bridge microarchitecture. The Tri-Gate design is considered 3D because the gate wraps around a raised source-to-drain ...

Carbon nanotube (CNT) transistors are essentially gate-all-around (GAA) field-effect transistors (GAA FETs) that can be ...

These are analogous to the terminals on a bipolar transistor, in that the source fulfills a similar role to the emitter, the gate to the base, and the drain to the collector. Thus the three basic ...

DRAM periphery: From SiON-based gate stacks to high-k/metal gates Until 2018, DRAM peripheral transistors were predominantly made in planar logic MOSFET technology with poly-Si/SiO 2 or poly-Si/SiON ...

A major breakthrough at Peking University might have just found the first step beyond silicon for semiconductors.

The semiconductor industry is making its first major change in a new transistor type in more than a decade, moving toward a next-generation structure called gate-all-around (GAA) FETs. Although GAA ...

Box 1: Criteria for practical optical logic. The electronic transistor and the logic gates based on it have qualitative features that are crucial for systems of any complexity, but very few ...

Dual 3-input NOR gate implemented in RTL as used in the Apollo Guidance Computer. (Credit: NASA) After the invention of the transistor, it was of course not a simple matter of just slapping some ...