Abstract: Gallium Nitride (GaN)-based Gate Stack (GS) Gate-All-Around Field Effect Transistors (GAA FETs) are promising candidates for next-generation energy-efficient electronics due to their ...
Abstract: This paper proposes a 1-bit reconfigurable reflectarray (RRA) element design based on the CMOS technique in terahertz (THz) frequency range. A switch is designed in 65nm CMOS process and the ...
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