Abstract: In this work, dual-gate enhancement-mode (E-mode) device based NAND circuit (DG-NAND) and the NAND block with double E-mode devices (DD-NAND) are developed and fabricated based on the GaN ...
Abstract: We investigate atmospheric neutron effects on floating-gate cells in NAND Flash memory devices. Charge loss is shown to occur, particularly at the highest program levels, causing raw bit ...
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