然而，事情并非如此简单：为了在SiC制造领域站稳脚跟，就必须拥有专门用于SiC的昂贵设备。SiC晶圆的生长温度超过2700℃，生长速度至少比Si慢200倍，这就需要大量的能量。另一方面，GaN在很大程度上可以使用与Si半导体制程相同的设备，GaN外延 ...
Brazilian authorities have halted the construction of a factory for Chinese electric vehicle (EV) giant BYD, saying workers lived in conditions comparable to "slavery". RIO DE JANEIRO More than 160 ...
五菱之光EV预售4.78万元起，百变空间，中国人自己的K-Car ...
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