The team from Peking University led by Qiu Chenguang, a senior researcher, and Peng Lianmao, an academician of the Chinese Academy of Sciences, has developed nano-gate ferroelectric transistors with ...

A joint research team led by Professors Donghee Son and Jin-Hong Park at SKKU has developed a stretchable, self-healing, and reconfigurable electronic circuit platform that can autonomously recover ...

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has started providing engineering samples of “TB9104FTG,” a gate driver [1] for bridge circuits used in ...

Sandisk Corporation has emerged as a structural winner in the AI-driven memory supercycle, benefitting not only from favorable near-term NAND pricing tailwinds, but also accelerating bit demand from ...

Bill Gates quietly sent nearly $8 billion to the private foundation of his ex-wife, Melinda French Gates, in what amounts to one of the largest divorce-related payouts ever disclosed. The $7.88 ...

Add Yahoo as a preferred source to see more of our stories on Google. Bill Gates attend a meeting of Bloomberg at the Plaza Hote on September 23, 2025 in New York City. (Patrick van Katwijk - Getty ...

Moving into 2026, industry experts anticipate that MLC NAND flash capacity will decrease by 41.7%, thanks to Samsung ending its own MLC shipments in June of this year and other manufacturers including ...

“Stranger Things” fans who believe a viral conspiracy theory that there is a secret ninth episode of the Netflix series dropping on Jan. 7 at 8 p.m. ET will have their post-series-finale hopes ...

In the early days of D-Wave’s history, the company made a decision to pursue annealing as its first technology to build a quantum computer because it promised to offer the fastest path to commercial ...

Increased storage needs at the edge and in the cloud are fueling rising demand for higher-capacity flash memory across multiple applications. Released every 12 to 18 months, 3D NAND scaling outpaces ...

TL;DR: Samsung has developed next-generation NAND flash storage that reduces power consumption by up to 96% compared to current technology. This breakthrough, based on ferroelectric transistors and ...