Abstract: The sensitivity of vertical-channel 3-D NAND Flash memories to wide-energy spectrum neutrons is investigated as a function of cell depth in the pillars. Errors are found to be less numerous ...
Abstract: Vertical stacking of thin die in memory packages as tall as 16 layers and 32 layers is common in high volume production. 3D NAND flash memory makers are also announcing and realizing their ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results